2SC3061 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SC3061 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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2SC3061 Datasheet Preview — Preview of 2SC3061 PDF

Datasheet Specifications

Part number: 2SC3061
Manufacturer: INCHANGE
File Size: 186.81 KB
Datasheet: 2SC3061-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching regulators
* Motor controls
* Ultrasonic generators
* Class C and D amplifiers
* Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltag

2SC3061 Distributors

📁 Related Datasheet

2SC3063 2SC3067 2SC3068 2SC3069 2SC3000 2SC3001

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2SC3061 NPN Transistor INCHANGE

INCHANGE 2SC3061-like datasheet