Datasheet4U Logo Datasheet4U.com

2SC3061 - NPN Transistor

2SC3061 Description

isc Silicon NPN Power Transistor 2SC3061 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

2SC3061 Applications

* Switching regulators
* Motor controls
* Ultrasonic generators
* Class C and D amplifiers
* Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltag

📥 Download Datasheet

Preview of 2SC3061 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3061
Manufacturer
INCHANGE
File Size
186.81 KB
Datasheet
2SC3061-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3063 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC3067 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3068 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3069 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
  • 2SC3007 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3061-like datasheet