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2SC3060 - NPN Transistor

2SC3060 Description

isc Silicon NPN Power Transistor 2SC3060 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

2SC3060 Applications

* Switching regulators
* Motor controls
* Ultrasonic generators
* Class C and D amplifiers
* Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltag

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Datasheet Details

Part number
2SC3060
Manufacturer
INCHANGE
File Size
186.67 KB
Datasheet
2SC3060-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3060-like datasheet