2SC3183 - NPN Triple Diffused Planar Silicon Transistor
2SC3183 Features
* High breakdown voltage (VCBO≥900V).
* Fast switching speed.
* Wide ASO. Package Dimensions unit:mm 2010C [2SC3183] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t
