* High breakdown voltage (VCEO≥300V).
* Excellent high frequency characteristic : Cre=1.8pF (typ).
* Adoption of MBIT process.
* No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes.
* Plastic-covered heat sink fac
2SC3789
Sanyo Semicon Device
155.03 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Application.
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