* High breakdown voltage (VCEO min=1800V).
* Small Cob (Cob typ=1.8pF).
* Wide ASO.
* High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4476] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum R
2SC4476
Sanyo Semicon Device
91.81 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN3339
NPN Triple Diffused Planar Silicon Transistor
2SC4476
1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
.
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