* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC5450] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications
2SC5450
Sanyo Semicon Device
74.48 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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