* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Pa
2SC5453
Sanyo Semicon Device
67.99 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
📁 Related Datasheet
2SC5450 Silicon NPN Power Transistor (Inchange Semiconductor)
2SC5450 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC5451 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC5452 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC5454 NPN TRANSISTOR (NEC)
2SC5455 NPN TRANSISTOR (NEC)
2SC5457 NPN Transistor (Panasonic Semiconductor)
2SC5457 Silicon NPN Transistor (Kexin)
2SC5458 NPN TRANSISTOR (Toshiba Semiconductor)
2SC5459 NPN TRANSISTOR (Toshiba Semiconductor)
