* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5451] 3.4 16.0 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2
2SC5451
Sanyo Semicon Device
74.20 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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