* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Rati
2SC5889
Sanyo Semicon Device
55.96 KB
Npn epitaxial planar silicon transistors.
Ordering number : ENN7401
2SC5889
NPN Epitaxial Planar Silicon Transistors
2SC5889
DC / DC Converter Applications
Applications
*
Package Di.
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