2SC5889 - NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC5889
Manufacturer	Sanyo Semicon Device
File Size	55.96 KB
Description	NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC5889_SanyoSemiconDevice.pdf

Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperat.

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Published: Jan 20, 2006 |