C5296 Datasheet - Sanyo Semicon Device

C5296 NPN Triple Diffused Planar Silicon Transistor

C5296 Features

* High speed : tf=100ns typ.

* High breakdown voltage : VCBO=1500V.

* High reliability (Adoption of HVP process).

* Adoption of MBIT process.

* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6

Datasheet Details

C5296

Sanyo Semicon Device

154.59 KB

Npn triple diffused planar silicon transistor.

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