* High speed : tf=100ns typ.
* High breakdown voltage : VCBO=1500V.
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6
C5296
Sanyo Semicon Device
154.59 KB
Npn triple diffused planar silicon transistor.
w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-De.
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