C5296 Datasheet, Transistor, Sanyo Semicon Device

✔ C5296 Features

High speed : tf=100ns typ.
High breakdown voltage : VCBO=1500V.
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Pac

✔ C5296 Application

Features
High speed : tf=100ns typ.
High breakdown voltage : VCBO=1500V.
High reliability (Adoption of

PDF File Details

Sanyo Semicon Device manufacturer logo

Part number:

C5296

Manufacturer:

Sanyo Semicon Device

File Size:

154.59kb

Download:

📄 Datasheet

Description:

Npn triple diffused planar silicon transistor.

📥 Download PDF (154.59kb)

📁 Related Datasheet

C5291 - 2SC5291 (Sanyo Semicon Device)
Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • Adoption of FBET.

C5294 - 2SC5294 (Panasonic Semiconductor)
Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High brea.

C5296 - Silicon NPN Power Transistors (SavantIC)
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC5296 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r.

C5297 - 2SC5297 (Sanyo Semicon Device)
w w w . D a t a S h e e t . c o . k r Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Def.

C5298 - 2SC5298 (Sanyo Semicon Device)
Ordering number : EN5292 .. NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Defl.

C5299 - 2SC5299 (Sanyo Semiconductor Corporation)
Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.

C5200 - Silicon NPN Transistor (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.

C5200N - NPN Transistor (Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .

C5201 - 2SC5201 (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO.

C5206 - Silicon NPN Transistor (Hitachi)
2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outli.

Stock and price

Pasternack Enterprises

COAX CBL FAKRA TO FAKRA 3.3'

DigiKey

PE3C5296-100CM

88 In Stock

Qty : 100 units

Unit Price : $34.52

🛒 Buy Now

TAGS

C5296 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device