* High speed : tf=100ns typ.
* High breakdown voltage : VCBO=1500V.
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications
C5297
Sanyo Semicon Device
154.84 KB
2sc5297.
w
w
w
.
D
a
t
a
S
h
e
e
t
.
c
o
.
k
r
Ordering number:ENN5291
NPN Triple Diffused Planar Silicon Transistor
2SC5297
Ultrahigh-Def.
📁 Related Datasheet
C5291 - 2SC5291
(Sanyo Semicon Device)
Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
• Adoption of FBET.
C5294 - 2SC5294
(Panasonic Semiconductor)
Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
C5296 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
w
w
w
.
D
a
t
a
S
h
e
e
t
.
c
o
.
k
r
Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon Transistor
2SC5296
Ultrahigh-De.
C5296 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5296
DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r.
C5298 - 2SC5298
(Sanyo Semicon Device)
Ordering number : EN5292
..
NPN Triple Diffused Planar Silicon Transistor
2SC5298
Ultrahigh-Definition CRT Display Horizontal Defl.
C5299 - 2SC5299
(Sanyo Semiconductor Corporation)
Ordering number:EN5293
NPN Triple Diffused Planar Silicon Transistor
2SC5299
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
