* High Speed : tf=100ns typ.
* High Breakdown voltage : VCBO=1500V.
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings a
C5298
Sanyo Semicon Device
166.82 KB
2sc5298.
Ordering number : EN5292 www.DataSheet4U.com NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Defl.
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