C5291 - 2SC5291
(Sanyo Semicon Device)
Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
• Adoption of FBET.
C5294 - 2SC5294
(Panasonic Semiconductor)
Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
C5296 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
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Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon Transistor
2SC5296
Ultrahigh-De.
C5296 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5296
DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r.
C5297 - 2SC5297
(Sanyo Semicon Device)
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a
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c
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Ordering number:ENN5291
NPN Triple Diffused Planar Silicon Transistor
2SC5297
Ultrahigh-Def.
C5299 - 2SC5299
(Sanyo Semiconductor Corporation)
Ordering number:EN5293
NPN Triple Diffused Planar Silicon Transistor
2SC5299
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
C5201 - 2SC5201
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO.
C5206 - Silicon NPN Transistor
(Hitachi)
2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM
Outli.
