B1396 - PNP Epitaxial Planar Silicon Transistor
B1396 Features
* Adoption of FBET, MBIT processes.
* Large current capacity.
* Low collector-to-emitter saturation voltage.
* Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Absolute Maximum Ratings at Ta = 25˚C
