FW133 - P-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Package Dimensions unit : mm 2129 [FW133] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic.

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Published: Mar 23, 2005 |