2SC5280
SavantIC
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Silicon power transistor.
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2SC5280 - NPN TRANSISTOR
(Toshiba Semiconductor)
2SC5280
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5280
HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SP.
2SC5280 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damp.
2SC5287 - NPN TRANSISTOR
(Sanken electric)
2SC5287
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC.
2SC5287 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5287
..
DESCRIPTION ·With TO-3PN package ·High vol.
2SC5287 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 550V(Min) ·High Switching Speed ·High Reliability ·Min.
2SC5288 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5288
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5288 is ideal for the driver stage amp.
2SC5289 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5289 is ideal for the final stage ampl.
2SC5200 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Remended for 100W High Fideli.
2SC5200 - NPN Epitaxial Silicon Transistor
(Fairchild Semiconductor)
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High.