BDY57 Datasheet, Transistor, SavantIC

PDF File Details

Part number:

BDY57

Manufacturer:

SavantIC

File Size:

146.52kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

  • With TO-3 package
  • High current capability
  • Fast switching speed APPLICATIONS
  • For use in low freque

  • Datasheet Preview: BDY57 📥 Download PDF (146.52kb)
    Page 2 of BDY57 Page 3 of BDY57

    BDY57 Application

    • Applications
    • For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline

    TAGS

    BDY57
    SILICON
    POWER
    TRANSISTOR
    SavantIC

    📁 Related Datasheet

    BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VC.

    BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
    NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

    BDY54 - Bipolar NPN Device (Seme LAB)
    BDY54 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY54 - SILICON NPN TRANSISTOR (TT)
    SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options.

    BDY54 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
    NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

    BDY54 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : .

    BDY55 - SILICON POWER TRANSISTOR (SavantIC)
    SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 .. DESCRIPTION ·With TO-3 package ·High current.

    BDY55 - Bipolar NPN Device (Seme LAB)
    BDY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS (Comset Semiconductors)
    BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .

    BDY55 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturatio.

    Stock and price

    Bristol Electronics
    BDY57
    38 In Stock
    0
    Unit Price : $0
    No Longer Stocked
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts