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2N7000 N-Channel Enhancement Mode Power MosFET

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Description

Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.

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Datasheet Specifications

Part number
2N7000
Manufacturer
SeCoS
File Size
145.45 KB
Datasheet
2N7000-SeCoS.pdf
Description
N-Channel Enhancement Mode Power MosFET

Features

* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable

Applications

* Load switch for portable devices
* DC/DC converter MARKING 2N 7000 021
* D  G ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current ID Power Dissipation PD Thermal Resistance from Junction to Ambie

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