* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability APPLICATIONS
* Load switch for portable devices
* DC/DC converter MARKING 2N 7000 021
* D G ABSOLUTE MAXIMUM RATINGS (TA=2
2N7000
SeCoS
145.45 KB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente
2N7000
0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
📁 Related Datasheet
2N700 - PNP Transistor
(Motorola)
2N700,A (GERMANIUM)
CASE 21
(TO-17)
PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap.
2N7000 - N-Channel DMOS FET
(Microchip)
2N7000
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
2N7000 - TMOS FET Transistor
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
M.
2N7000 - N-channel MOSFET
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
2N7000 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconducto.
2N7000 - N-Channel MOSFET
(Vishay Siliconix)
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(B.
2N7000 - N-Channel MOSFET
(NTE)
2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled.
2N7000 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r.
2N7000 - N-Channel MOSFET
(ST Microelectronics)
2N7000 2N7002
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
.
