* Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING CFR CFS 1 Base 3 Emitter SOT-89 4 A E B F G H J 123 C BCE D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50
2SD2150
SeCoS
308.29 KB
Npn transistor.
Elektronische Bauelemente
2SD2150
3 A, 40 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre.
📁 Related Datasheet
2SD2150 - Transistor
(Rohm)
Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A）
2) Excellent current gain character.
2SD2150 - NPN Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for I.
2SD2150 - Low Frequency Transistor
(GME)
Production specification
LOW FREQUENCY TRANSISTER（20V，3A）
FEATURES
z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A).
z Excellent current gain ch.
2SD2150 - NPN Transistor
(Jiangsu Changjiang Electronics)
.DataSheet.co.kr
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150
SOT-89
1. BASE 2. COLLECTOR 3..
2SD2150 - NPN Transistor
(Weitron Technology)
.DataSheet.co.kr
2SD2150
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATIN.
2SD2150 - Low Frequency Transistor
(Guangdong Kexin Industrial)
.DataSheet.co.kr
SMD Type
Low Frequency Transistor 2SD2150
Transistors
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+.
2SD2150-HF - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 2SD2150-HF
Transistors
■ Features
● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) .
2SD2151 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2151
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.7±0.1
s Features
q q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0..
