* Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~90 2SD2136-Q 70~150 2SD2136-R 120~250 Collector
2SD2136
SeCoS
253.16 KB
Npn transistor.
Elektronische Bauelemente
2SD2136
3A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free.
📁 Related Datasheet
2SD213 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD213
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: V.
2SD2130 - Silicon NPN Transistor
(Toshiba Semiconductor)
2SD2130
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2130
Micro Motor Drive, Hammer Drive Applications Switching Ap.
2SD2131 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
2SD2131
High-Power Switching Applications Hammer Drive, Pulse Motor Drive A.
2SD2132 - NPN SIlicon Transistor
(Rohm)
.
2SD2133 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
7.5±0.2
Unit: mm
4.5±0.2
• Low collector-e.
2SD2135 - Silicon NPN Power Transistor
(Panasonic)
MaDinistecnoanntincuee/ d Maintenance/Discontinued ipnPlcallenuaedsdepesmmlavfanaoihsieilntnilttodtptefweo:dnd/nil/inaliwsaosgncncwwcocofiwoenennut.gt.
2SD2136 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1416
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.
2SD2136 - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SD2136
NPN SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power application.
.
