MMDT2227 - NPN-PNP Silicon Multi-Chip Transistor
MMDT2227 Features
* SOT-363 Power dissipation PCM : 0.2 W (Tamp.= 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .014(0.35) .006(0
