Planar MOS Schottky technology
Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction
B
N
D E
M P H J K L
Millimeter Min. Max. 14.22 16.51 9.65 10.67 12.50 14.75 3.56 4.90 0.51 1.45 2.03 2.92 0.31 0.76 3.5 4.5
A O C G F
REF. J K L M N O P Millimeter Min. Max. 0.7 1.78 0.38 1.02 2.39 2.69 2.50 3.43 3.10 4.09 8.38 9.65 0.89 1.45.
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