SGM1K35N20 N-CHANNEL MOSFET

SeCoS

Description

Elektronische Bauelemente SGM1K35 20 1.6A, 200V, RDS(O ) 1.35Ω -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

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Datasheet Specifications

Part number: SGM1K35N20
Manufacturer: SeCoS
File Size: 560.01 KB
Datasheet: SGM1K35N20-SeCoS.pdf
Description: N-CHANNEL MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35N20 = Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate

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SGM1K35N20 N-CHANNEL MOSFET SeCoS

SeCoS SGM1K35N20-like datasheet