SGM1K35N20 Datasheet - SeCoS

N-CHANNEL MOSFET

SGM1K35N20 Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35N20 = Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate

SGM1K35N20 General Description

The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . The SGM1K35N20 meet the RoHS and Green Product requirement with full function reliability appro.

SGM1K35N20 Datasheet (560.01 KB)

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Datasheet Details

Part number:

SGM1K35N20

Manufacturer:

SeCoS

File Size:

560.01 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SGM1K35 20 1.6A, 200V, RDS(O ) 1.35Ω -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.

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SGM1K35N20 N-CHANNEL MOSFET SeCoS

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SGM1K35N20 Features

SGM1K35N20 General Description

Datasheet Details

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