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SGM0410 N-Channel Enhancement Mode Power MOSFET

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Description

Elektronische Bauelemente SGM0410 3.5A, 100V, RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifi.
The SGM0410 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of t.

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Datasheet Specifications

Part number
SGM0410
Manufacturer
SeCoS
File Size
316.02 KB
Datasheet
SGM0410-SeCoS.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-S

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