SSD80N03

N-Channel MOSFET

SeCoS

SSD80N03 Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 80N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF.

SSD80N03 General Description

The SSD80N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellen.

SSD80N03 Datasheet (397.25 KB)

SSD80N03 Datasheet Preview — Preview of SSD80N03 PDF

Datasheet Details

Part number:

SSD80N03

Manufacturer:

SeCoS

File Size:

397.25 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SSD80N03 80A , 30V , RDS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

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SSD80N03 N-Channel MOSFET SeCoS

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SSD80N03 Features

SSD80N03 General Description

Datasheet Details

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