* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed MARKING CJU80N03 PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max.
SSD80N03J Datasheet (93.33 KB)
SSD80N03J
SeCoS
93.33 KB
N-channel mosfet.
Elektronische Bauelemente
SSD80N03J
80A, 30V, RDS(ON) 6.5mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies hal.
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