SSPRDJ3522-C Dual N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSPRDJ3522-C 35A, 30V, RDS(ON) 11mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
The SSPRDJ3522-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge f.

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Datasheet Specifications

Part number: SSPRDJ3522-C
Manufacturer: SeCoS
File Size: 248.12 KB
Datasheet: SSPRDJ3522-C-SeCoS.pdf
Description: Dual N-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J3522 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1.535 1.935

SSPRDJ3522-C Distributors

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SSPRDJ3522-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSPRDJ3522-C-like datasheet