* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J6560 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1
SSPRDJ6560-C Datasheet (503.77 KB)
SSPRDJ6560-C
SeCoS
503.77 KB
Dual-channel mosfet.
Elektronische Bauelemente
SSPRDJ6560-C
N-Ch: 6.8A, 60V, RDS(ON) 45mΩ P-Ch: -5.1A, -60V, RDS(ON) 82mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Com.
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