SSPRDJ6560-C Dual-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSPRDJ6560-C N-Ch: 6.8A, 60V, RDS(ON) 45mΩ P-Ch: -5.1A, -60V, RDS(ON) 82mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Com.
The SSPRDJ6560-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate char.

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Datasheet Specifications

Part number: SSPRDJ6560-C
Manufacturer: SeCoS
File Size: 503.77 KB
Datasheet: SSPRDJ6560-C-SeCoS.pdf
Description: Dual-Channel MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J6560 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1

SSPRDJ6560-C Distributors

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SSPRDJ6560-C Dual-Channel MOSFET SeCoS

SeCoS SSPRDJ6560-C-like datasheet