* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4503A =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 3.1 3.15 3.45 2.9 3.1 0.15 BSC 0.935 1.135 1.535 1.935
SSPRDJ4503A-C Datasheet (673.33 KB)
SSPRDJ4503A-C
SeCoS
673.33 KB
N & p-ch enhancement mode power mosfet.
Elektronische Bauelemente
SSPRDJ4503A-C
N-Ch: 25.8A, 30V, RDS(ON) 18mΩ P-Ch: -20.7A, -30V, RDS(ON) 28mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS .
📁 Related Datasheet
SSPRDJ4504-C Dual-Channel MOSFET (SeCoS)
SSPRDJ4411-C Dual P-Ch Enhancement Mode Power MOSFET (SeCoS)
SSPRDJ3522-C Dual N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSPRDJ6560-C Dual-Channel MOSFET (SeCoS)
SSPR100N03S-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
SSPR10N06-C N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSPR10N10-C N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSPR18N10 N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSPR18N10-C N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSPR30N03S-C N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
