Part number:
2N3202
Manufacturer:
Seme LAB
File Size:
11.97kb
Download:
Description:
Bipolar pnp device.
PDF File Details
2N3202
Seme LAB
11.97kb
Bipolar pnp device.
📁 Related Datasheet
2N320 - PNP germanium power transistors
(Motorola)
2N319 thru 2N321 (Germanium)
CASE 31(1)
(TO-S)
\ . ~
Base connected to case
PNP germanium transistors for audio amplifier and low-frequency switch.
2N3202 - PNP Silicon Power Transistor
(Solitron Devices)
.
2N3203 - PNP Transistor
(SSDI)
3 - 3.5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiE.
2N3203 - PNP Silicon Power Transistor
(Solitron Devices)
.
2N3204 - PNP Transistor
(SSDI)
3 - 3.5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiE.
2N3204 - PNP Silicon Power Transistor
(Solitron Devices)
.
2N3209 - Silicon Planar PNP Transistor
(STMicroelectronics)
.
2N3209 - PNP SILICON TRANSISTOR
(Motorola)
2N3209 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
designed for medium·speed saturated switching applications.
• Low Collector· Emitter Saturation Volta.
2N3209 - Bipolar PNP Device
(Seme LAB)
2N3209
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
2N3209 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
