2N3210 Datasheet (Motorola) - NPN silicon high frequency switching transistor

2N3210, NPN silicon high frequency switching transistor

0 2N321 (SILICON) NPN silicon high frequency switching transistor is designed for high speed, saturated switching applications for industrial service.

CASE 22 (TO-IS) MAXIMUM RATINGS Rating Collector-Emitter Voltage Applicable from 0 to 500 mAdc Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCB VEB IC PD PD Tstg Value 15 40 5.0 50