2N3209CSM
Seme LAB
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Pnp switching transistor.
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2N3209 - Silicon Planar PNP Transistor
(STMicroelectronics)
.
2N3209 - PNP SILICON TRANSISTOR
(Motorola)
2N3209 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
designed for medium·speed saturated switching applications.
• Low Collector· Emitter Saturation Volta.
2N3209 - Bipolar PNP Device
(Seme LAB)
2N3209
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
2N3209 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N3209DCSM - PNP GENERAL PURPOSE TRANSISTOR
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3209DCSM
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED.
2N3209X - HIGH SPEED PNP SWITCHING TRANSISTOR
(Seme LAB)
2N3209X
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
HIGH SPEED PNP SWITCHING TRANSISTOR
FOR HIGH R.
2N320 - PNP germanium power transistors
(Motorola)
2N319 thru 2N321 (Germanium)
CASE 31(1)
(TO-S)
\ . ~
Base connected to case
PNP germanium transistors for audio amplifier and low-frequency switch.
2N3202 - Bipolar PNP Device
(Seme LAB)
2N3202
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package..
2N3202 - PNP Silicon Power Transistor
(Solitron Devices)
.
2N3203 - PNP Transistor
(SSDI)
3 - 3.5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiE.