2N3211 Datasheet (Motorola) - NPN silicon high frequency switching transistor

2N3211, NPN silicon high frequency switching transistor

2N3211 (SILICON) CASE 22 (TO-18) NPN silicon high frequency switching transistor designed for high speed, saturated switching applications for industrial service.

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector- Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA =25'c Derate above 25 'c Total Device Dissipation @ TC = 25'C Derate above 25'C Operating & Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD PD Value 15 40 6.0 500 0.36 2.06 1.2