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2N6301, 2N6300 - DARLINGTON SILICON POWER TRANSISTORS

2N6301 Description

2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad.max.3.61 (0.142) 4.08(0.161) rad.12 6.35 (0.250) 8.64 (0.340) DARLIN.

2N6301 Features

* High DC Current Gain
* Monolithic Construction with Built-in Base
* Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector
* Emitter Voltage 60V 80V VCBO Collector
* Base Voltage 60V 80V VEBO

2N6301 Applications

* 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1
* Base TO
* 66 (TO-213AA) Pin 2
* Emitter Case

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 2N6301, 2N6300. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2N6301, 2N6300
Manufacturer
Seme LAB
File Size
20.75 KB
Datasheet
2N6300-SemeLAB.pdf
Description
DARLINGTON SILICON POWER TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: 2N6301, 2N6300.
Please refer to the document for exact specifications by model.

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DARLINGTON SILICON POWER TRANSISTORS Seme LAB
Seme LAB 2N6301-like datasheet