* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tca
D1009UK
Seme LAB
95.92 KB
Metal gate rf silicon fet.
TetraFET
D1009UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
1 HD
B
2
3
5
4
E (4 pls)
F I
G (typ)
P (2 pls) A
PIN 1 .
📁 Related Datasheet
D1000 - 2SD1000
(Renesas)
.
D1001 - 2SD1001
(Renesas)
.
D1001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D1002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D1003UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1003UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A B
1
2
4
3
M
G
C
D E F
HK
PIN 1 PIN 3
SOURCE SOURCE
DM
PIN 2 .
D1004 - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8.
D10040180GT - GaAs Power Doubler
(PDI)
..
Product Specification
D10040180GT
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • .
D10040180GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D10040180GTH
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC
FEATURES
• • •.
