* SUITABLE FOR BROAD BAND APPLICATIONS
* SIMPLE BIAS CIRCUITS
* ULTRA-LOW THERMAL RESISTANCE
* BeO FREE
* LOW Crss
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj
DMD1010-A Datasheet (81.42 KB)
DMD1010-A
Seme LAB
81.42 KB
Metal gate rf silicon fet.
TetraFET DMD1010 DMD1010-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) .
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