DMD1006-A Datasheet - Seme LAB

DMD1006-A METAL GATE RF SILICON FET

TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE DIM Millimetres Tol. A 19.43 0.13 B 9.78 0.13 C 9.40 0.10 D 45° 5° E 1.63R 0.13 F 27.94 0.13 G 12.70 0.13 H 1.57 0.13 I 34.04 0.13 J 1.01 0.13 K 19.94 0.25 L 0.10 0.25 M 4.24 0.25 E ( 2 pls) BC H L PIN 2 DRAIN Inches 0.765 0.385 0.370 45° 0.064R 1.100 0.500 0.062 1.340 0.040 0.785 0.004 0.167 Tol. 0.005 0.

DMD1006-A Features

* SUITABLE FOR BROAD BAND APPLICATIONS

* SIMPLE BIAS CIRCUITS

* ULTRA-LOW THERMAL RESISTANCE

* BeO FREE

* LOW Crss

* HIGH GAIN - 15 dB MINIMUM APPLICATIONS

* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°

DMD1006-A Datasheet (90.16 KB)

DMD1006-A Datasheet Preview — Preview of DMD1006-A PDF

Datasheet Details

Part number:

DMD1006-A

Manufacturer:

Seme LAB

File Size:

90.16 KB

Description:

Metal gate rf silicon fet.

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DMD1006-A METAL GATE SILICON FET Seme LAB

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