DMD1006-A - METAL GATE RF SILICON FET
TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE DIM Millimetres Tol.
A 19.43 0.13 B 9.78 0.13 C 9.40 0.10 D 45° 5° E 1.63R 0.13 F 27.94 0.13 G 12.70 0.13 H 1.57 0.13 I 34.04 0.13 J 1.01 0.13 K 19.94 0.25 L 0.10 0.25 M 4.24 0.25 E ( 2 pls) BC H L PIN 2 DRAIN Inches 0.765 0.385 0.370 45° 0.064R 1.100 0.500 0.062 1.340 0.040 0.785 0.004 0.167 Tol.
0.005 0
DMD1006-A Features
* SUITABLE FOR BROAD BAND APPLICATIONS
* SIMPLE BIAS CIRCUITS
* ULTRA-LOW THERMAL RESISTANCE
* BeO FREE
* LOW Crss
* HIGH GAIN - 15 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
