DMD1012 Datasheet - Seme LAB

DMD1012 METAL GATE RF SILICON FET

TetraFET DMD1012 DMD1012-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1.52R 0.13 H 10.16 0.15 I 21.84 0.23 J 0.10 0.02 K 1.96 0.13 M 1.02 0.13 N 4.45 0.38 O 34.04 0.13 P 1.63R 0.13 JK PIN 2 PIN 4 DRAIN 1 GATE 2 Inches 0.600 0.4.

DMD1012 Features

* SUITABLE FOR BROAD BAND APPLICATIONS

* SIMPLE BIAS CIRCUITS

* ULTRA-LOW THERMAL RESISTANCE

* BeO FREE

* LOW Crss

* HIGH GAIN

* 13 dB MINIMUM APPLICATIONS

* VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase

DMD1012 Datasheet (27.25 KB)

DMD1012 Datasheet Preview — Preview of DMD1012 PDF

Datasheet Details

Part number:

DMD1012

Manufacturer:

Seme LAB

File Size:

27.25 KB

Description:

Metal gate rf silicon fet.

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DMD1012 METAL GATE SILICON FET Seme LAB

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