IRFF430 Datasheet - Seme LAB

IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. BVDSS ID(cont) RDS(on) 500V 2.5 1.5Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 Package (TO-205AF) Underside View Pin 1 Source Pin 2 Gate Pin 3 Dra.

IRFF430 Features

* AVALANCHE ENERGY RATED

* HERMETICALLY SEALED

* DYNAMIC dv/dt RATING

* SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate

* Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A I

IRFF430 Datasheet (18.88 KB)

IRFF430 Datasheet Preview — Preview of IRFF430 PDF

Datasheet Details

Part number:

IRFF430

Manufacturer:

Seme LAB

File Size:

18.88 KB

Description:

N-channel enhancement mode power mosfet.

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IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB

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