* AVALANCHE ENERGY RATED
* HERMETICALLY SEALED
* DYNAMIC dv/dt RATING
* SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate
* Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A I
IRFF430
Seme LAB
18.88 KB
N-channel enhancement mode power mosfet.
2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N CHANNEL.
📁 Related Datasheet
IRFF430 N-Channel Power MOSFET (Intersil Corporation)
IRFF430 HEXFET TRANSISTORS (International Rectifier)
IRFF430 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF431 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF432 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF433 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF420 N-Channel Power MOSFET (Seme LAB)
IRFF420 N-Channel Power MOSFET (Intersil Corporation)
IRFF420 HEXFET TRANSISTORS (International Rectifier)
IRFF420 FIELD EFFECT POWER TRANSISTOR (GE)
