* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF422
GE
187.84 KB
Field effect power transistor.
~D~[?~ IRFF422,423
FIELD EFFECT POVVER TRANSISTOR
1.4 AMPERES
500, 450 VOLTS
RDS(ON) = 4.0 n
Preliminary
This series of N-Channel Enhancement-mode.
📁 Related Datasheet
IRFF420 N-Channel Power MOSFET (Seme LAB)
IRFF420 N-Channel Power MOSFET (Intersil Corporation)
IRFF420 HEXFET TRANSISTORS (International Rectifier)
IRFF420 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF421 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF423 FIELD EFFECT POWER TRANSISTOR (GE)
IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)
IRFF430 N-Channel Power MOSFET (Intersil Corporation)
IRFF430 HEXFET TRANSISTORS (International Rectifier)
IRFF430 FIELD EFFECT POWER TRANSISTOR (GE)
