IRFF423 Datasheet - GE

IRFF423 FIELD EFFECT POWER TRANSISTOR

~D~[?~ IRFF422,423 FIELD EFFECT POVVER TRANSISTOR 1.4 AMPERES 500, 450 VOLTS RDS(ON) = 4.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

IRFF423 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF423 Datasheet (187.84 KB)

IRFF423 Datasheet Preview — Preview of IRFF423 PDF

Datasheet Details

Part number:

IRFF423

Manufacturer:

File Size:

187.84 KB

Description:

Field effect power transistor.

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IRFF423 FIELD EFFECT POWER TRANSISTOR GE

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