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IRFF423, IRFF422 FIELD EFFECT POWER TRANSISTOR

IRFF423 Description

~D~[?~ IRFF422,423 FIELD EFFECT POVVER TRANSISTOR 1.4 AMPERES 500, 450 VOLTS RDS(ON) = 4.0 n Preliminary This series of N-Channel Enhancement-mode.

IRFF423 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFF423, IRFF422. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFF423, IRFF422
Manufacturer
GE
File Size
187.84 KB
Datasheet
IRFF422-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRFF423, IRFF422.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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  • IRFF034 - Bipolar NPN Device (Seme LAB)
  • IRFF110 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFF111 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF112 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF113 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)

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FIELD EFFECT POWER TRANSISTOR GE
GE IRFF423-like datasheet