IRFF421 Datasheet - GE

IRFF421 FIELD EFFECT POWER TRANSISTOR

~D~[F~ IRFF420,421 FIELD EFFECT POVVER TRANSISTOR 1.6 AMPERES 500, 450 VOLTS ROS(ON) =3.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF421 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF421 Datasheet (188.28 KB)

IRFF421 Datasheet Preview — Preview of IRFF421 PDF

Datasheet Details

Part number:

IRFF421

Manufacturer:

File Size:

188.28 KB

Description:

Field effect power transistor.

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IRFF421 FIELD EFFECT POWER TRANSISTOR GE

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