* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF433
GE
197.77 KB
Field effect power transistor.
~[R30~~LF IRFF432,433 FIELD EFFECT POVVER TRANSISTOR 2.25 AMPERES 500, 450 VOLTS ROS(ON) =2.0 n Preliminary This series of N-Channel Enhancement-m.
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