HFD1N65 - N-Channel MOSFET
HFD1N65 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V 100% Avalanche Tes
