HFD1N60S Datasheet - SemiHow

HFD1N60S N-Channel MOSFET

HFD1N60S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFD1N60S Datasheet (692.56 KB)