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HFD1N65S - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter.

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Datasheet Details

Part number HFD1N65S
Manufacturer SemiHow
File Size 371.09 KB
Description N-Channel MOSFET
Datasheet download datasheet HFD1N65S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.Gate 2. Drain 3.