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HFD1N65S Datasheet - SemiHow

HFD1N65S N-Channel MOSFET

HFD1N65S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V April 2009 BVDSS =

HFD1N65S Datasheet (371.09 KB)

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Datasheet Details

Part number:

HFD1N65S

Manufacturer:

SemiHow

File Size:

371.09 KB

Description:

N-channel mosfet.

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