HFD1N65S - N-Channel MOSFET

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SemiHow

Part number	HFD1N65S
Manufacturer	SemiHow
File Size	371.09 KB
Description	N-Channel MOSFET
Datasheet	HFD1N65S Datasheet
Additional preview pages of the HFD1N65S datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter.

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Published: Jun 7, 2015 |