HFD1N80 Datasheet - SemiHow

HFD1N80 N-Channel MOSFET

HFD1N80 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFD1N80 Datasheet (766.91 KB)