HFD1N80 - N-Channel MOSFET
HFD1N80 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V 100% Avalanche Teste
