HFP7N60 - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.96 Ω (Typ. ) @VGS=10V Dec 2005 BVDSS = 600 V RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

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Published: Jun 7, 2015 |