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HFS730U
HFS730U
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.75 ȍ7S#9GS=10V 100% Avalanche Tested
Oct 2013
BVDSS = 400 V RDS(on) typ = 0.75 ȍ ID = 6.0 A
TO-220F
12 3
1.Gate 2. Drain 3.