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SM16N65C - 650V N-Channel MOSFET

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Datasheet Details

Part number	SM16N65C
Manufacturer	SemiMOS
File Size	1.23 MB
Description	650V N-Channel MOSFET
Datasheet	SM16N65C-SemiMOS.pdf

SM16N65C Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 48.5nC (Typ. ).
BVDSS=650V,ID=16A.
RDS(on) : 0.56 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Single.

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Published: Mar 30, 2025 |