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SEMIX352GAR128DS IGBT

SEMIX352GAR128DS Description

SEMiX352GAR128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj .

SEMIX352GAR128DS Features

* Homogeneous Si
* SPT = Soft-Punch-Through technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMIX352GAR128DS Applications

* AC inverter drives
* UPS
* Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V

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